A New Consideration of Carrier Transport Through Carbon Nanotubes Which Has Been Placed as a Channel of Field Effect Transistor
نویسندگان
چکیده
Abstract: In this paper we have reported a mechanism which corrects Fermi level of Single Wall Carbon NanoTubes (SWCNT). We solved Boltezman equation for electron-phonon scattering to obtain electron-phonon distribution function. After that we renormalized distribution function in presence of electric field then we calculated Source Drain current. Our simulation results show that electrons scatter into all energy level of carbon NanoTube while holes don’t.
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